Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Length
10.4mm
Height
16.4mm
Width
4.6mm
Number of Elements per Chip
1
Product Details
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
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Stock information temporarily unavailable.
P.O.A.
Each (In a Tube of 50) (ex VAT)
50
P.O.A.
Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
Ideate. Create. Collaborate
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
11A
Maximum Drain Source Voltage Vds
600V
Package Type
TO-220FP
Series
MDmesh
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
360mΩ
Channel Mode
Enhancement
Maximum Gate Source Voltage Vgs
25, -25V
Maximum Operating Temperature
150°C
Transistor Configuration
Single
Length
10.4mm
Height
16.4mm
Width
4.6mm
Number of Elements per Chip
1
Product Details
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
