Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
71nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
35W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
Stock information temporarily unavailable.
€ 26.54
€ 2.83 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
5
€ 26.54
€ 2.83 Each (Supplied in a Tube) (ex VAT)
Stock information temporarily unavailable.
Production pack (Tube)
5
| Quantity | Unit price |
|---|---|
| 10 - 99 | € 2.83 |
| 100 - 499 | € 2.66 |
| 500 - 999 | € 2.62 |
| 1000+ | € 2.60 |
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
30A
Maximum Drain Source Voltage Vds
710V
Series
MDmesh M5
Package Type
TO-220
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
95mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
71nC
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
1.5V
Maximum Power Dissipation Pd
35W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
10.4mm
Standards/Approvals
No
Width
4.6mm
Height
16.4mm
Automotive Standard
No
Country of Origin
China
Product Details
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.