STMicroelectronics MDmesh DM2 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 STB18N60DM2
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
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Stock information temporarily unavailable.
€ 14.50
€ 2.899 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 14.50
€ 2.899 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 5 | € 2.899 | € 14.50 |
| 10 - 95 | € 2.467 | € 12.34 |
| 100 - 495 | € 1.934 | € 9.67 |
| 500+ | € 1.633 | € 8.17 |
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Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
600V
Series
MDmesh DM2
Package Type
TO-263
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
290mΩ
Channel Mode
Enhancement
Typical Gate Charge Qg @ Vgs
20nC
Forward Voltage Vf
1.3V
Maximum Power Dissipation Pd
90W
Minimum Operating Temperature
-55°C
Maximum Operating Temperature
150°C
Length
9.35mm
Standards/Approvals
No
Height
4.6mm
Automotive Standard
No
Product details
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products