Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
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P.O.A.
Standard
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Stock information temporarily unavailable.
Standard
1
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Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
SiC Power Module
Channel Type
N
Maximum Continuous Drain Current Id
12A
Maximum Drain Source Voltage Vds
1200V
Package Type
Hip-247
Series
SCT
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
0.52Ω
Channel Mode
Depletion
Maximum Power Dissipation Pd
150W
Minimum Operating Temperature
-55°C
Maximum Gate Source Voltage Vgs
25V
Forward Voltage Vf
4.3V
Maximum Operating Temperature
200°C
Height
34.95mm
Length
15.75mm
Standards/Approvals
No
Width
5.15mm
Automotive Standard
AEC-Q101
Product Details
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
