Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220AC
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC10065
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
130μA
Maximum Forward Voltage Vf
1.65V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
48A
Maximum Operating Temperature
175°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
ECOPACK, UL94 V0
Automotive Standard
No
Product Details
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
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Stock information temporarily unavailable.
€ 93.50
€ 1.87 Each (In a Tube of 50) (ex VAT)
50
€ 93.50
€ 1.87 Each (In a Tube of 50) (ex VAT)
Stock information temporarily unavailable.
50
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 200 | € 1.87 | € 93.50 |
| 250 - 450 | € 1.823 | € 91.17 |
| 500+ | € 1.773 | € 88.65 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Schottky Diode
Mount Type
Through Hole
Package Type
TO-220AC
Maximum Continuous Forward Current If
10A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
Single
Series
STPSC10065
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
130μA
Maximum Forward Voltage Vf
1.65V
Minimum Operating Temperature
-40°C
Peak Non-Repetitive Forward Surge Current Ifsm
48A
Maximum Operating Temperature
175°C
Length
10.4mm
Height
15.75mm
Standards/Approvals
ECOPACK, UL94 V0
Automotive Standard
No
Product Details
The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost performance in hard switching conditions. Its high forward surge capability ensures good robustness during transient phases
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
