Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
175°C
Height
20.15mm
Width
5.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
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Stock information temporarily unavailable.
€ 144.20
€ 4.807 Each (In a Tube of 30) (ex VAT)
30
€ 144.20
€ 4.807 Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 120 | € 4.807 | € 144.20 |
| 150+ | € 4.64 | € 139.20 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsChannel Type
Type N
Product Type
MOSFET
Maximum Continuous Drain Current Id
33A
Maximum Drain Source Voltage Vds
650V
Package Type
TO-247
Series
DM6
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
91mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
52.5nC
Maximum Gate Source Voltage Vgs
25V
Maximum Operating Temperature
175°C
Height
20.15mm
Width
5.15mm
Length
15.75mm
Standards/Approvals
No
Automotive Standard
No
Country of Origin
China
Product Details
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
