Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.
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Stock information temporarily unavailable.
€ 7.31
€ 7.31 Each (ex VAT)
Standard
1
€ 7.31
€ 7.31 Each (ex VAT)
Stock information temporarily unavailable.
Standard
1
| Quantity | Unit price |
|---|---|
| 1 - 9 | € 7.31 |
| 10 - 99 | € 6.25 |
| 100 - 599 | € 6.17 |
| 600 - 1199 | € 6.10 |
| 1200+ | € 6.03 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Package Type
DO-247 LL
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
1200V
Diode Configuration
Single
Series
STPS
Rectifier Type
Rectifier Diode
Pin Count
2
Minimum Operating Temperature
-65°C
Peak Non-Repetitive Forward Surge Current Ifsm
1100A
Maximum Operating Temperature
175°C
Length
15.9mm
Height
41.2mm
Standards/Approvals
RoHS
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC diode is available in DO-247 with long leads and is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF schottky diode structure with a 1200 V rating. Due to the schottky construction, no recovery is shown during turn off and ringing patterns are negligible. The minimal capacitive turn off behaviour is independent of temperature.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
