Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.
Stock information temporarily unavailable.
€ 45.55
€ 1.518 Each (In a Tube of 30) (ex VAT)
30
€ 45.55
€ 1.518 Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
Technical Documents
Specifications
Brand
STMicroelectronicsProduct Type
Rectifier & Schottky Diode
Mount Type
Through Hole
Maximum Continuous Forward Current If
20A
Peak Reverse Repetitive Voltage Vrrm
650V
Diode Configuration
2x Common Cathode Pair
Series
STPSC2
Rectifier Type
Schottky
Pin Count
2
Peak Reverse Current Ir
200μA
Maximum Forward Voltage Vf
1.45V
Peak Reverse Recovery Time trr
0ns
Standards/Approvals
AEC‑Q101, RoHS, ECOPACK2, PPAP
Automotive Standard
AEC-Q101
Country of Origin
China
Product Details
The STMicroelectronics SiC Diode, molded in a DO-247 LL package with long leads, is an ultra-high-performance power Schottky rectifier. It is built using a silicon carbide substrate, enabling a low VF Schottky structure with a 650 V rating. Thanks to its Schottky design, it exhibits no recovery at turn-off and minimal ringing. Its capacitive turn-off behaviour is very low and remains stable across temperature variations.