Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Width
1.7mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details
Dual P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0.499
Each (In a Pack of 20) (ex VAT)
20
€ 0.499
Each (In a Pack of 20) (ex VAT)
20
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
20 - 180 | € 0.499 | € 9.99 |
200 - 480 | € 0.469 | € 9.38 |
500 - 980 | € 0.425 | € 8.49 |
1000 - 1980 | € 0.399 | € 7.98 |
2000+ | € 0.374 | € 7.48 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
3.8 A
Maximum Drain Source Voltage
20 V
Package Type
1206 ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
156 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7 nC @ 5 V
Width
1.7mm
Minimum Operating Temperature
-55 °C
Height
1.1mm
Country of Origin
China
Product details