Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 1.787
Each (In a Pack of 5) (ex VAT)
5
€ 1.787
Each (In a Pack of 5) (ex VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 45 | € 1.787 | € 8.94 |
50 - 120 | € 1.52 | € 7.60 |
125 - 245 | € 1.429 | € 7.15 |
250 - 495 | € 1.34 | € 6.70 |
500+ | € 1.251 | € 6.26 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
300 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
88 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
10.41mm
Width
4.7mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
9.01mm
Country of Origin
China
Product details