onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251)
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
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€ 0.522
Each (In a Tube of 75) (ex VAT)
75
€ 0.522
Each (In a Tube of 75) (ex VAT)
75
Buy in bulk
| quantity | Unit price | Per Tube |
|---|---|---|
| 75 - 75 | € 0.522 | € 39.16 |
| 150 - 300 | € 0.491 | € 36.84 |
| 375+ | € 0.47 | € 35.23 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Continuous Collector Current
2 A
Maximum Collector Emitter Voltage
100 V
Maximum Emitter Base Voltage
5 V
Package Type
IPAK (TO-251)
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
1000
Maximum Base Emitter Saturation Voltage
4 V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Saturation Voltage
3 V
Maximum Collector Cut-off Current
20µA
Height
6.35mm
Width
2.38mm
Maximum Power Dissipation
20 W
Minimum Operating Temperature
-65 °C
Dimensions
6.73 x 2.38 x 6.35mm
Maximum Operating Temperature
+150 °C
Length
6.73mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products