Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1
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Please check again later.
Stock information temporarily unavailable.
€ 0.397
Each (On a Reel of 2500) (ex VAT)
N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
2500
€ 0.397
Each (On a Reel of 2500) (ex VAT)
N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CEATMA1
Stock information temporarily unavailable.
2500
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
3.9 A
Maximum Drain Source Voltage
800 V
Series
CoolMOS™ CE
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
1.4 Ω
Maximum Gate Threshold Voltage
3.9V
Number of Elements per Chip
1