Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Stock information temporarily unavailable.
$ 0.79
Each (In a Pack of 10) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Select packaging type
10
$ 0.79
Each (In a Pack of 10) (ex VAT)
Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 90 | $ 0.79 | $ 7.90 |
100 - 240 | $ 0.75 | $ 7.50 |
250 - 490 | $ 0.719 | $ 7.18 |
500 - 990 | $ 0.687 | $ 6.87 |
1000+ | $ 0.434 | $ 4.34 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC