Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Stock information temporarily unavailable.
$ 1.527
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Select packaging type
5
$ 1.527
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 Infineon IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 45 | $ 1.527 | $ 7.64 |
50 - 120 | $ 1.267 | $ 6.33 |
125 - 245 | $ 1.177 | $ 5.88 |
250 - 495 | $ 1.099 | $ 5.50 |
500+ | $ 0.841 | $ 4.21 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC