Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
€ 1.938
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Select packaging type
Production pack (Reel)
5
€ 1.938
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 187 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB018N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
5
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
5 - 20 | € 1.938 | € 9.69 |
25 - 45 | € 1.744 | € 8.72 |
50 - 120 | € 1.629 | € 8.14 |
125 - 245 | € 1.513 | € 7.56 |
250+ | € 1.395 | € 6.97 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
187 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC