Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
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Stock information temporarily unavailable.
€ 3.604
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Select packaging type
Production pack (Reel)
2
€ 3.604
Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 190 A, 60 V, 3-Pin PG-TO263-3 Infineon IPB013N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
2
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
2 - 18 | € 3.604 | € 7.21 |
20 - 48 | € 3.244 | € 6.49 |
50 - 98 | € 3.025 | € 6.05 |
100 - 198 | € 2.813 | € 5.62 |
200+ | € 2.63 | € 5.26 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
190 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO263-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC