Technical Document
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-143
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details
General Purpose PNP Transistors, Infineon
Bipolar Transistors, Infineon
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P.O.A.
250
P.O.A.
250
Technical Document
Specifications
Brand
InfineonTransistor Type
PNP
Maximum DC Collector Current
-100 mA
Maximum Collector Emitter Voltage
-30 V
Package Type
SOT-143
Mounting Type
Surface Mount
Maximum Power Dissipation
300 mW
Minimum DC Current Gain
420
Transistor Configuration
Current Mirror
Maximum Collector Base Voltage
30 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
250 MHz
Pin Count
4
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Dimensions
2.9 x 1.3 x 0.9mm
Product details