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FCU360N65S3R0 N-Channel MOSFET, 10 A, 650 V, 3-Pin IPAK ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 10 A
  • Package Type IPAK
  • Maximum Power Dissipation 83 W
  • Mounting Type Through Hole
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NTHL065N65S3F N-Channel MOSFET, 46 A, 650 V, 3-Pin TO-247 ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 46 A
  • Package Type TO-247
  • Maximum Power Dissipation 337 W
  • Mounting Type Through Hole
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NTHL110N65S3F N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 30 A
  • Package Type TO-247
  • Maximum Power Dissipation 240 W
  • Mounting Type Through Hole
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ON Semiconductor FGH40T120SQDNL4 P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247
  • Maximum Operating Temperature +175 °C
  • Maximum Collector Emitter Voltage 1200 V
  • Maximum Continuous Collector Current 160 A
  • Package Type TO-247
  • Maximum Power Dissipation 454 W
See similar products in IGBTs
ON Semiconductor FGH60T65SQD-F155 P-Channel IGBT, 60 A 650 V, 3-Pin TO-247 G03
  • Maximum Operating Temperature +175 °C
  • Maximum Collector Emitter Voltage 650 V
  • Maximum Continuous Collector Current 60 A
  • Package Type TO-247 G03
  • Maximum Power Dissipation 333 W
See similar products in IGBTs
FCP165N65S3 N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 19 A
  • Package Type TO-220
  • Maximum Power Dissipation 154 W
  • Mounting Type Through Hole
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650V/75 FAST IGBT
  • Maximum Operating Temperature +175 °C
  • Maximum Collector Emitter Voltage 650 V
  • Maximum Continuous Collector Current 200 A
  • Package Type TO-247
  • Maximum Power Dissipation 375 W
See similar products in IGBTs
650V/75 FAST IGBT
  • Maximum Operating Temperature +175 °C
  • Maximum Collector Emitter Voltage 650 V
  • Maximum Continuous Collector Current 200 A
  • Package Type TO-247
  • Maximum Power Dissipation 375 W
See similar products in IGBTs
FCH125N65S3R0-F155 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 24 A
  • Package Type TO-247
  • Maximum Power Dissipation 181 W
  • Mounting Type Through Hole
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FCP125N65S3R0 N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-220 ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 24 A
  • Package Type TO-220
  • Maximum Power Dissipation 181 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FCPF165N65S3R0L N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 19 A
  • Package Type TO-220F
  • Maximum Power Dissipation 35 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FCPF190N65S3R0L N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-220F ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 17 A
  • Package Type TO-220F
  • Maximum Power Dissipation 33 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FCU600N65S3R0 N-Channel MOSFET, 6 A, 650 V, 3-Pin IPAK ON Semiconductor
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 6 A
  • Package Type IPAK
  • Maximum Power Dissipation 54 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FET 100V 4.2 MOHM PQFN56
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 124 A
  • Package Type PQFN
  • Maximum Power Dissipation 125 W
  • Mounting Type Surface Mount
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FET 100V 4.2 MOHM PQFN56
  • Maximum Operating Temperature +150 °C
  • Maximum Continuous Drain Current 124 A
  • Package Type PQFN
  • Maximum Power Dissipation 125 W
  • Mounting Type Surface Mount
See similar products in MOSFETs
FET 100V 4.5 MOHM
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 128 A
  • Package Type TO-220
  • Maximum Power Dissipation 150 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FET 100V 4.5 MOHM
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 128 A
  • Package Type TO-220
  • Maximum Power Dissipation 150 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FET 100V 4.5 MOHM
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 128 A
  • Package Type TO-220F
  • Maximum Power Dissipation 37.5 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FET 100V 4.5 MOHM
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 128 A
  • Package Type TO-220F
  • Maximum Power Dissipation 37.5 W
  • Mounting Type Through Hole
See similar products in MOSFETs
FET 100V 8.5 MOHM
  • Maximum Operating Temperature +175 °C
  • Maximum Continuous Drain Current 76 A
  • Package Type TO-220F
  • Maximum Power Dissipation 35 W
  • Mounting Type Through Hole
See similar products in MOSFETs
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