Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3

RS Stock No.: 228-2925PBrand: VishayManufacturers Part No.: SiS590DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.167 O, 0.251 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 V, 2.5 V

Transistor Material

Si

Number of Elements per Chip

2

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€ 87.60

€ 0.876 Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3
Select packaging type

€ 87.60

€ 0.876 Each (Supplied on a Reel) (ex VAT)

Vishay TrenchFET Dual N/P-Channel MOSFET, 4 A, 100 V, 8-Pin PowerPAK 1212-8 Dual SiS590DN-T1-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

quantityUnit pricePer Reel
100 - 240€ 0.876€ 8.76
250 - 490€ 0.792€ 7.92
500 - 990€ 0.746€ 7.46
1000+€ 0.699€ 6.99

Ideate. Create. Collaborate

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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8 Dual

Series

TrenchFET

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.167 O, 0.251 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5 V, 2.5 V

Transistor Material

Si

Number of Elements per Chip

2

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more