Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0.537
Each (Supplied on a Reel) (ex VAT)
20
€ 0.537
Each (Supplied on a Reel) (ex VAT)
20
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
20 - 180 | € 0.537 | € 10.74 |
200 - 480 | € 0.429 | € 8.58 |
500 - 980 | € 0.402 | € 8.05 |
1000 - 1980 | € 0.349 | € 6.97 |
2000+ | € 0.29 | € 5.80 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
12 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Number of Elements per Chip
1
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
7.5 nC @ 10 V
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Country of Origin
China
Product details