N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
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€ 0.398
Each (In a Pack of 25) (ex VAT)
25
€ 0.398
Each (In a Pack of 25) (ex VAT)
25
Buy in bulk
| quantity | Unit price | Per Pack |
|---|---|---|
| 25 - 225 | € 0.398 | € 9.94 |
| 250 - 600 | € 0.374 | € 9.36 |
| 625 - 1225 | € 0.338 | € 8.45 |
| 1250 - 2475 | € 0.318 | € 7.95 |
| 2500+ | € 0.298 | € 7.46 |
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
75 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.85V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
0.71 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Width
1.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Height
1.02mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products