Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 1.12
€ 1.12 Each (ex VAT)
Standard
1
€ 1.12
€ 1.12 Each (ex VAT)
Standard
1
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| quantity | Unit price |
|---|---|
| 1 - 9 | € 1.12 |
| 10 - 49 | € 0.80 |
| 50 - 99 | € 0.75 |
| 100 - 249 | € 0.68 |
| 250+ | € 0.59 |
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Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
100 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
540 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
6.1 nC @ 5 V
Height
9.01mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products