Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Country of Origin
China
Product details
P-Channel MOSFET, 30V to 80V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 1.35
Each (In a Tube of 50) (ex VAT)
50
€ 1.35
Each (In a Tube of 50) (ex VAT)
50
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
50 - 50 | € 1.35 | € 67.48 |
100 - 200 | € 1.147 | € 57.36 |
250+ | € 1.013 | € 50.64 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
4.7 A
Maximum Drain Source Voltage
60 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
43 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
10.51mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Width
4.65mm
Minimum Operating Temperature
-55 °C
Height
15.49mm
Country of Origin
China
Product details