Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 82.40
€ 1.648 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
50
€ 82.40
€ 1.648 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
50
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
50 - 120 | € 1.648 | € 8.24 |
125 - 245 | € 1.578 | € 7.89 |
250 - 495 | € 1.403 | € 7.01 |
500+ | € 1.316 | € 6.58 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
9.65mm
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details