N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

RS Stock No.: 178-3693Brand: Vishay SiliconixManufacturers Part No.: SiS110DN-T1-GE3
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Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.2V

Country of Origin

China

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€ 0.20

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3

3000

Available in multiples of 3000
3000€ 599.95
6000€ 1,199.91
9000€ 1,799.86
12000€ 2,399.81
15000€ 2,999.77
18000€ 3,599.72
21000€ 4,199.67
24000€ 4,799.63
27000€ 5,399.58
30000€ 5,999.54
33000€ 6,599.49
36000€ 7,199.44
39000€ 7,799.40
42000€ 8,399.35
45000€ 8,999.30

€ 0.20

Each (On a Reel of 3000) (ex VAT)

N-Channel MOSFET, 14.2 A, 100 V, 8-Pin PowerPAK 1212-8 Vishay Siliconix SiS110DN-T1-GE3
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000€ 599.95
6000€ 1,199.91
9000€ 1,799.86
12000€ 2,399.81
15000€ 2,999.77
18000€ 3,599.72
21000€ 4,199.67
24000€ 4,799.63
27000€ 5,399.58
30000€ 5,999.54
33000€ 6,599.49
36000€ 7,199.44
39000€ 7,799.40
42000€ 8,399.35
45000€ 8,999.30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

14.2 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

70 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

3.15mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

3.15mm

Typical Gate Charge @ Vgs

8.5 nC @ 10 V

Series

TrenchFET

Minimum Operating Temperature

-55 °C

Height

1.07mm

Forward Diode Voltage

1.2V

Country of Origin

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more