Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Country of Origin
Japan
Product details
NPN Darlington Transistors, Toshiba
Bipolar Transistors, Toshiba
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Please check again later.
€ 0.715
Each (In a Pack of 10) (ex VAT)
10
€ 0.715
Each (In a Pack of 10) (ex VAT)
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 20 | € 0.715 | € 7.15 |
30+ | € 0.605 | € 6.05 |
Technical Document
Specifications
Brand
ToshibaTransistor Type
NPN
Maximum Continuous Collector Current
6 A
Maximum Collector Emitter Voltage
400 V
Maximum Emitter Base Voltage
5 V
Package Type
TO-220SIS
Mounting Type
Through Hole
Pin Count
3
Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
2.5 V
Maximum Collector Base Voltage
600 V
Maximum Collector Emitter Saturation Voltage
2 V
Maximum Collector Cut-off Current
20µA
Maximum Operating Temperature
+150 °C
Length
10mm
Base Current
1A
Height
15mm
Width
4.5mm
Maximum Power Dissipation
25 W @ 25 °C
Dimensions
10 x 4.5 x 15mm
Country of Origin
Japan
Product details