Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 4.96
€ 0.991 Each (In a Pack of 5) (ex VAT)
5
€ 4.96
€ 0.991 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 0.991 | € 4.96 |
| 25 - 45 | € 0.598 | € 2.99 |
| 50 - 120 | € 0.548 | € 2.74 |
| 125 - 245 | € 0.539 | € 2.69 |
| 250+ | € 0.536 | € 2.68 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15.8 A
Maximum Drain Source Voltage
600 V
Series
DTMOSIV
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
230 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
130 W
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Width
4.45mm
Length
10.16mm
Typical Gate Charge @ Vgs
43 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.7V
Height
15.1mm
Country of Origin
Japan
Product details


