Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details
MOSFET Transistors, Toshiba
€ 4.41
€ 0.881 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 4.41
€ 0.881 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 0.881 | € 4.41 |
| 25 - 45 | € 0.749 | € 3.74 |
| 50 - 245 | € 0.724 | € 3.62 |
| 250 - 495 | € 0.701 | € 3.50 |
| 500+ | € 0.676 | € 3.38 |
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
15 A
Maximum Drain Source Voltage
40 V
Series
U-MOSVIII-H
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
37 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
5.5mm
Length
6.5mm
Typical Gate Charge @ Vgs
10 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Forward Diode Voltage
1.2V
Height
2.3mm
Country of Origin
Japan
Product details


