Toshiba Dual Silicon N-Channel MOSFET, 300 mA, 60 V, 6-Pin US6 SSM6N7002KFU,LF(T
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
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€ 29.57
€ 0.074 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
400
€ 29.57
€ 0.074 Each (Supplied on a Reel) (ex VAT)
Production pack (Reel)
400
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price | Per Reel |
|---|---|---|
| 400 - 600 | € 0.074 | € 14.78 |
| 800 - 1000 | € 0.073 | € 14.55 |
| 1200 - 2800 | € 0.068 | € 13.61 |
| 3000+ | € 0.062 | € 12.44 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
300 mA
Maximum Drain Source Voltage
60 V
Package Type
US6
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
1.2e+006 Ω
Maximum Gate Threshold Voltage
2.1V
Number of Elements per Chip
2
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products