Toshiba N-Channel MOSFET, 2 A, 40 V, 3-Pin SOT-23 SSM3K339R
Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
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€ 6.86
€ 0.137 Each (In a Pack of 50) (ex VAT)
Standard
50
€ 6.86
€ 0.137 Each (In a Pack of 50) (ex VAT)
Standard
50
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| quantity | Unit price | Per Pack |
|---|---|---|
| 50 - 100 | € 0.137 | € 6.86 |
| 150 - 450 | € 0.115 | € 5.75 |
| 500 - 950 | € 0.099 | € 4.93 |
| 1000+ | € 0.084 | € 4.22 |
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
ToshibaChannel Type
N
Maximum Continuous Drain Current
2 A
Maximum Drain Source Voltage
40 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
390 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Number of Elements per Chip
1
Width
1.8mm
Length
2.9mm
Typical Gate Charge @ Vgs
1.1 nC @ 4.2 V
Maximum Operating Temperature
+150 °C
Forward Diode Voltage
1.2V
Height
0.7mm
Country of Origin
Thailand
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products