Toshiba GT20J341 IGBT, 20 A 600 V, 3-Pin TO-220SIS, Through Hole
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
45 W
Package Type
TO-220SIS
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
100kHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 12.51
€ 2.50 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
5
€ 12.51
€ 2.50 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
5
Stock information temporarily unavailable.
Please check again later.
| quantity | Unit price |
|---|---|
| 5 - 9 | € 2.50 |
| 10 - 24 | € 2.35 |
| 25 - 49 | € 2.22 |
| 50+ | € 2.10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
ToshibaMaximum Continuous Collector Current
20 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±25V
Maximum Power Dissipation
45 W
Package Type
TO-220SIS
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
100kHz
Transistor Configuration
Single
Dimensions
10 x 4.5 x 15mm
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products