Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 156.99
€ 5.233 Each (In a Tube of 30) (ex VAT)
30
€ 156.99
€ 5.233 Each (In a Tube of 30) (ex VAT)
Stock information temporarily unavailable.
30
| Quantity | Unit price | Per Tube |
|---|---|---|
| 30 - 30 | € 5.233 | € 156.99 |
| 60 - 120 | € 5.097 | € 152.90 |
| 150+ | € 4.972 | € 149.15 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
35 A
Maximum Drain Source Voltage
710 V
Series
MDmesh M5
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
78 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
210 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
5.15mm
Length
15.75mm
Typical Gate Charge @ Vgs
82 nC @ 10 V
Transistor Material
Si
Height
20.15mm
Country of Origin
China
Product details
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.


