STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2

RS Stock No.: 168-8839Brand: STMicroelectronicsManufacturers Part No.: STP18N65M2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

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Stock information temporarily unavailable.

€ 71.85

€ 1.437 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2

€ 71.85

€ 1.437 Each (In a Tube of 50) (ex VAT)

STMicroelectronics MDmesh M2 N-Channel MOSFET, 12 A, 650 V, 3-Pin TO-220 STP18N65M2
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Tube
50 - 50€ 1.437€ 71.85
100 - 200€ 1.261€ 63.05
250+€ 1.229€ 61.43

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

650 V

Series

MDmesh M2

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

330 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Number of Elements per Chip

1

Width

4.6mm

Length

10.4mm

Typical Gate Charge @ Vgs

20 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Forward Diode Voltage

1.6V

Height

15.75mm

Country of Origin

China

Product details

N-channel MDmesh™ M2 Series, STMicroelectronics

A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more