Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
158W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 10.39
€ 2.077 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 10.39
€ 2.077 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
| Quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 2.077 | € 10.39 |
| 25 - 45 | € 1.974 | € 9.87 |
| 50 - 120 | € 1.775 | € 8.88 |
| 125 - 245 | € 1.60 | € 8.00 |
| 250+ | € 1.516 | € 7.58 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
80A
Maximum Drain Source Voltage Vds
60V
Package Type
TO-220
Series
STripFET F7
Mount Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance Rds
3.5mΩ
Channel Mode
Enhancement
Forward Voltage Vf
1.2V
Maximum Power Dissipation Pd
158W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
55nC
Maximum Operating Temperature
175°C
Standards/Approvals
No
Width
4.6 mm
Height
9.15mm
Length
10.4mm
Automotive Standard
No
Product details
N-Channel STripFET™ F7 Series, STMicroelectronics
The STMicroelectronics STripFET™ F7 series of low-voltage MOSFETs have lower device on-state resistance, with reduced internal capacitance and gate charge for faster and more efficient switching.


