Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
Stock information temporarily unavailable.
€ 6.88
€ 3.439 Each (In a Pack of 2) (ex VAT)
Standard
2
€ 6.88
€ 3.439 Each (In a Pack of 2) (ex VAT)
Stock information temporarily unavailable.
Standard
2
| Quantity | Unit price | Per Pack |
|---|---|---|
| 2 - 8 | € 3.439 | € 6.88 |
| 10 - 18 | € 3.266 | € 6.53 |
| 20 - 48 | € 2.943 | € 5.89 |
| 50 - 98 | € 2.649 | € 5.30 |
| 100+ | € 2.522 | € 5.04 |
Technical Document
Specifications
Brand
STMicroelectronicsProduct Type
MOSFET
Channel Type
Type N
Maximum Continuous Drain Current Id
110A
Maximum Drain Source Voltage Vds
100V
Package Type
H2PAK
Mount Type
Surface
Pin Count
3
Maximum Drain Source Resistance Rds
3.9mΩ
Channel Mode
Enhancement
Maximum Power Dissipation Pd
250W
Maximum Gate Source Voltage Vgs
20 V
Minimum Operating Temperature
-55°C
Typical Gate Charge Qg @ Vgs
117nC
Forward Voltage Vf
1.2V
Maximum Operating Temperature
175°C
Width
10.57 mm
Height
4.8mm
Length
10.4mm
Standards/Approvals
No
Automotive Standard
No
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.


