N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

RS Stock No.: 168-8819Brand: STMicroelectronicsManufacturers Part No.: STH150N10F7-2
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Height

4.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

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€ 1.893

Each (On a Reel of 1000) (ex VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2

€ 1.893

Each (On a Reel of 1000) (ex VAT)

N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK-2 STMicroelectronics STH150N10F7-2
Stock information temporarily unavailable.

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JOIN FOR FREE

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

110 A

Maximum Drain Source Voltage

100 V

Series

DeepGate, STripFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

10.57mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Length

10.4mm

Typical Gate Charge @ Vgs

117 nC @ 10 V

Height

4.8mm

Minimum Operating Temperature

-55 °C

Country of Origin

China

Product details

N-Channel STripFET™ DeepGate™, STMicroelectronics

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more