STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount
Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
65 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 9.20
€ 1.84 Each (In a Pack of 5) (ex VAT)
Standard
5
€ 9.20
€ 1.84 Each (In a Pack of 5) (ex VAT)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
| quantity | Unit price | Per Pack |
|---|---|---|
| 5 - 20 | € 1.84 | € 9.20 |
| 25 - 45 | € 1.748 | € 8.74 |
| 50 - 120 | € 1.576 | € 7.88 |
| 125 - 245 | € 1.413 | € 7.07 |
| 250+ | € 1.345 | € 6.72 |
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
STMicroelectronicsMaximum Continuous Collector Current
10 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
65 W
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Channel Type
N
Pin Count
3
Switching Speed
1MHz
Transistor Configuration
Single
Dimensions
10.4 x 9.35 x 4.6mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Product details
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products