Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics
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€ 0.916
Each (In a Pack of 10) (ex VAT)
Standard
10
€ 0.916
Each (In a Pack of 10) (ex VAT)
Standard
10
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
10 - 40 | € 0.916 | € 9.16 |
50 - 90 | € 0.869 | € 8.69 |
100 - 240 | € 0.79 | € 7.90 |
250 - 490 | € 0.77 | € 7.70 |
500+ | € 0.751 | € 7.51 |
Technical Document
Specifications
Brand
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
40 V
Series
DeepGate, STripFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
6 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
70 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
6.6mm
Typical Gate Charge @ Vgs
36 nC @ 10 V
Width
6.2mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
2.4mm
Product details
N-Channel STripFET™ DeepGate™, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.