Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.75mm
€ 17.13
€ 0.685 Each (In a Pack of 25) (ex VAT)
Standard
25
€ 17.13
€ 0.685 Each (In a Pack of 25) (ex VAT)
Standard
25
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Pack |
---|---|---|
25 - 75 | € 0.685 | € 17.13 |
100 - 225 | € 0.591 | € 14.78 |
250+ | € 0.512 | € 12.79 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
3.15mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Height
0.75mm