Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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€ 1.403
Each (In a Pack of 5) (ex VAT)
5
€ 1.403
Each (In a Pack of 5) (ex VAT)
5
Buy in bulk
quantity | Unit price | Per Pack |
---|---|---|
5 - 20 | € 1.403 | € 7.02 |
25 - 95 | € 1.359 | € 6.80 |
100 - 245 | € 1.326 | € 6.63 |
250 - 495 | € 1.286 | € 6.43 |
500+ | € 1.256 | € 6.28 |
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
109 A
Maximum Drain Source Voltage
60 V
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
114 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Typical Gate Charge @ Vgs
27 nC @ 10 V
Width
3.15mm
Number of Elements per Chip
1
Maximum Operating Temperature
+175 °C
Length
3.15mm
Height
0.75mm
Series
NVTFS5C658NL
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Product details