onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT1G

RS Stock No.: 103-2941Brand: onsemiManufacturers Part No.: 2N7002LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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onsemi 2SD1816T-TL-H NPN Transistor, 4 A, 100 V, 3-Pin TP-FA
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Stock information temporarily unavailable.

€ 109.12

€ 0.036 Each (On a Reel of 3000) (ex VAT)

onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT1G

€ 109.12

€ 0.036 Each (On a Reel of 3000) (ex VAT)

onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002LT1G
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

quantityUnit pricePer Reel
3000 - 3000€ 0.036€ 109.12
6000 - 9000€ 0.035€ 105.60
12000 - 27000€ 0.034€ 102.08
30000 - 57000€ 0.034€ 102.08
60000+€ 0.033€ 98.56

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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You may be interested in
onsemi 2SD1816T-TL-H NPN Transistor, 4 A, 100 V, 3-Pin TP-FA
P.O.A.Each (On a Reel of 700) (ex VAT)

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.3mm

Transistor Material

Si

Number of Elements per Chip

1

Length

2.9mm

Maximum Operating Temperature

+150 °C

Height

0.94mm

Minimum Operating Temperature

-55 °C

Country of Origin

Czech Republic

Product details

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
onsemi 2SD1816T-TL-H NPN Transistor, 4 A, 100 V, 3-Pin TP-FA
P.O.A.Each (On a Reel of 700) (ex VAT)