Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China
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€ 5.313
Each (In a Tube of 30) (ex VAT)
30
€ 5.313
Each (In a Tube of 30) (ex VAT)
30
Buy in bulk
quantity | Unit price | Per Tube |
---|---|---|
30 - 90 | € 5.313 | € 159.38 |
120 - 240 | € 4.65 | € 139.51 |
270 - 480 | € 4.529 | € 135.86 |
510 - 990 | € 4.413 | € 132.38 |
1020+ | € 4.302 | € 129.05 |
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Country of Origin
China