N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L

RS Stock No.: 178-4244Brand: ON SemiconductorManufacturers Part No.: FCPF165N65S3R0L
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China

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P.O.A.

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L

P.O.A.

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220F onsemi FCPF165N65S3R0L
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220F

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

4.6mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.3mm

Typical Gate Charge @ Vgs

35 nC @ 10 V

Height

15.7mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Country of Origin

China