Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 24.55
€ 1.227 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
20
€ 24.55
€ 1.227 Each (Supplied in a Tube) (ex VAT)
Production pack (Tube)
20
Stock information temporarily unavailable.
Please check again later.
quantity | Unit price | Per Tube |
---|---|---|
20 - 98 | € 1.227 | € 2.46 |
100 - 148 | € 1.198 | € 2.40 |
150 - 298 | € 1.168 | € 2.34 |
300+ | € 1.138 | € 2.28 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
172 A
Maximum Drain Source Voltage
60 V
Series
StrongIRFET
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3.7V
Minimum Gate Threshold Voltage
2.1V
Maximum Power Dissipation
230 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
142 nC @ 10 V
Maximum Operating Temperature
+175 °C
Length
15.87mm
Width
5.31mm
Transistor Material
Si
Number of Elements per Chip
1
Height
20.7mm
Minimum Operating Temperature
-55 °C
Product details
StrongIRFET™ Power MOSFET, Infineon
Infineon's StrongIRFET family is optimized for low RDS(on) and high-current capability. This portfolio offers improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management where performance and robustness are essential.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.