Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
74 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
480.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
138 nC @ 10 V
Width
15.95mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Height
4.57mm
Series
CoolMOS C6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Standard
1
P.O.A.
Standard
1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
58 A
Maximum Drain Source Voltage
650 V
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
74 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
480.8 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
138 nC @ 10 V
Width
15.95mm
Transistor Material
Si
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
10.36mm
Height
4.57mm
Series
CoolMOS C6
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.9V
Product details
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.