Infineon OptiMOS™ 3 N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1

RS Stock No.: 752-8381Brand: InfineonManufacturers Part No.: IPP110N20N3GXKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

9.45mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 7.39

€ 7.39 Each (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1
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€ 7.39

€ 7.39 Each (ex VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 88 A, 200 V, 3-Pin TO-220 IPP110N20N3GXKSA1
Stock information temporarily unavailable.
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Stock information temporarily unavailable.

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quantityUnit price
1 - 4€ 7.39
5 - 9€ 7.17
10 - 14€ 7.04
15 - 24€ 6.82
25+€ 6.64

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

88 A

Maximum Drain Source Voltage

200 V

Package Type

TO-220

Series

OptiMOS™ 3

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

11 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Maximum Operating Temperature

+175 °C

Typical Gate Charge @ Vgs

65 nC @ 10 V

Height

9.45mm

Minimum Operating Temperature

-55 °C

Product details

Infineon OptiMOS™3 Power MOSFETs, 100V and over

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more