Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2

RS Stock No.: 214-9067Brand: InfineonManufacturers Part No.: IPI80N06S4L07AKSA2
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Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0067 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

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€ 34.31

€ 0.686 Each (In a Tube of 50) (ex VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2

50

Available in multiples of 50
50€ 34.31
100€ 66.68
150€ 100.02
200€ 133.36
250€ 162.42
300€ 194.91
350€ 227.39
400€ 259.87
450€ 292.36
500€ 316.28
550€ 347.91
600€ 379.53
650€ 411.16
700€ 442.79
750€ 474.42

€ 34.31

€ 0.686 Each (In a Tube of 50) (ex VAT)

Infineon OptiMOS™ -T2 N-Channel MOSFET, 80 A, 60 V, 3-Pin I2PAK IPI80N06S4L07AKSA2

Stock information temporarily unavailable.

50

Available in multiples of 50
50€ 34.31
100€ 66.68
150€ 100.02
200€ 133.36
250€ 162.42
300€ 194.91
350€ 227.39
400€ 259.87
450€ 292.36
500€ 316.28
550€ 347.91
600€ 379.53
650€ 411.16
700€ 442.79
750€ 474.42

Stock information temporarily unavailable.

QuantityUnit pricePer Tube
50 - 50€ 0.686€ 34.31
100 - 200€ 0.667€ 33.34
250 - 450€ 0.65€ 32.48
500 - 950€ 0.633€ 31.63
1000+€ 0.618€ 30.89

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ -T2

Package Type

I2PAK (TO-262)

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.0067 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Number of Elements per Chip

1

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more