Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 7.39
€ 0.739 Each (In a Pack of 10) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Select packaging type
Standard
10
€ 7.39
€ 0.739 Each (In a Pack of 10) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 120 A, 60 V, 3-Pin PG-TO252-3 IPD038N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Standard
10
Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.739 | € 7.39 |
| 100 - 240 | € 0.701 | € 7.01 |
| 250 - 490 | € 0.672 | € 6.72 |
| 500 - 990 | € 0.642 | € 6.42 |
| 1000+ | € 0.406 | € 4.06 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
120 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


