Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
€ 59.21
€ 1.184 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 59.21
€ 1.184 Each (Supplied on a Reel) (ex VAT)
Infineon Dual SiC N-Channel MOSFET, 139 A, 60 V, 3-Pin PG-TO252-3 IPD028N06NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Stock information temporarily unavailable.
| Quantity | Unit price | Per Reel |
|---|---|---|
| 50 - 120 | € 1.184 | € 5.92 |
| 125 - 245 | € 1.10 | € 5.50 |
| 250 - 495 | € 1.027 | € 5.14 |
| 500+ | € 0.786 | € 3.93 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
139 A
Maximum Drain Source Voltage
60 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC


