Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Stock information temporarily unavailable.
Please check again later.
Stock information temporarily unavailable.
€ 56.06
€ 1.121 Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Select packaging type
Production pack (Reel)
50
€ 56.06
€ 1.121 Each (Supplied on a Reel) (ex VAT)
Dual SiC N-Channel MOSFET, 143 A, 40 V, 3-Pin PG-TO252-3 Infineon IPD023N04NF2SATMA1
Stock information temporarily unavailable.
Select packaging type
Production pack (Reel)
50
Buy in bulk
quantity | Unit price | Per Reel |
---|---|---|
50 - 120 | € 1.121 | € 5.61 |
125 - 245 | € 1.046 | € 5.23 |
250 - 495 | € 0.969 | € 4.84 |
500+ | € 0.504 | € 2.52 |
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
143 A
Maximum Drain Source Voltage
40 V
Package Type
PG-TO252-3
Mounting Type
Surface Mount
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC